Review Article

Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

Figure 24

schematic device cross-sections of MOSFET devices shown. (a) Uniformly-doped (UD) MOSFET; (b) delta-doped (DD) MOSFET; (c) pocket-Implanted (PI) MOSFET; (d) Fully-depleted SO1 (FDSOI) MOSFET's [1].
178516.fig.0024a
(a)
178516.fig.0024b
(b)
178516.fig.0024c
(c)
178516.fig.0024d
(d)