Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

<table>Structures of different n-channel MOSFETs. (a) Conventional structure, (b) LAC structure showing a p<sup>+</sup>-pocket near the source end, and (c) DH structure showing a p<sup>+</sup>-pocket near both the source and drain ends [<a href="/journals/vlsi/2011/178516/#B27">33</a>].</table>

VLSI Design

fig25

Figure 25

Figure 25: Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications 