VLSI Design

Table of Contents: 2001

  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 028105

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

M. Lorenzini | L. Haspeslagh | ... | H. E. Maes
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 070818

Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices

J. R. Barker | J. R. Watling
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 024532

Dynamics of Non-equilibrium Short-wave-length Phonons in Semiconductor Heterostructures

D. A. Romanov | J. Eizenkop | V. V. Mitin
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 067156

Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices

J. R. Watling | J. R. Barker | A. Asenov
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 019759

Scaling of pHEMTs to Decanano Dimensions

K. Kalna | A. Asenov | ... | I. Thayne
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 062583

Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs

G. Iannaccone | S. Gennai
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 016196

Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs

E. Amirante | G. Iannaccone | B. Pellegrini
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 058910

Detection of Quantum Cellular Automaton Action in Silicon-on-insulator Cells

M. Gattobigio | M. Macucci | G. Iannaccone
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 012624

Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages

Peiji Zhao | H. L. Cui | ... | Fliex Buot
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 054247

A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors

M. Nedjalkov | H. Kosina | ... | I. Dimov
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 096951

An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution

S. Barraud | P. Dollfus | ... | J. E. Velázquez
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 093289

Density-functional Based Tight-binding Calculations on Thiophene Polymorphism

J. Widany | G. Daminelli | ... | P. Lugli
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 047013

Microscopic Modeling of GaN-based Heterostructures

F. Sacconi | F. Della Sala | ... | Paolo Lugli
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 089617

Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

M. Trovato | L. Reggiani
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 042430

Dynamical Equation and Monte Carlo Simulation of the Two-time Wigner Function for Electron Quantum Transport

R. Brunetti | A. Bertoni | ... | C. Jacoboni

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