A Study on the Stoichiometry of One-Dimensional Nanostructures

Figure 3

(a) and (b) Low and high magnification TEM image of ZnTe nanowire grown in the optimized growth temperature (the temperatures of the source and substrate were 750°C and 500°C, resp.). The inset in (b) shows the SAED pattern. (c) and (d) Low and high magnification TEM image of ZnTe nanowire grown at a higher growth temperature (the temperatures of the source and substrate were 850°C and 600°C, resp.) depicting the stacking faults shown by white arrays in panel (d).

(a)

(b)

(c)

(d)