Research Article
Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes
Figure 2
Comparison of I-V dependences for metal/n-GaN Schottky diode from Figure 2 [5] (symbols) with theoretical against dependences (solid curves), computed using parameters: = 0.89 eV, m* = 0.222 , meV, .
