Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 <b><i>μ</i>m</b> Technology

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Advances in Condensed Matter Physics

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Figure 1

Figure 1: Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 <b><i>μ</i>m</b> Technology 

Advances in Condensed Matter Physics

Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology

Figure 1