Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology

Table 1

Electrical values for the memory cell.

Electrical parameter	Value
𝑉DD1	3.3 V
𝑉DD2	8 V
𝐶1	1 pF
𝐶2	3 fF
𝐶par	360 fF
𝑅1, 𝑅2	1𝐸99 Ω
MFG1,2	6 𝜇m/3 𝜇m
𝑀1, 𝑀2, 𝑀4, 𝑀5	6 𝜇m/3 𝜇m
𝑀3	30 𝜇m/1.5 𝜇m
𝑀6, 𝑀9	12 𝜇m/6 𝜇m
𝑀7, 𝑀8	30 𝜇m/6 𝜇m
𝑀10	12 𝜇m/6 𝜇
𝑀11	60 𝜇m/6 𝜇m
𝑀12	100 𝜇m/1.5 𝜇m
𝐼bias	50 𝜇A
𝑉ref	1.5 V
𝑉𝑏1	3.3 V
𝑉read	0–3.3 V