Research Article
Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology
Table 1
Electrical values for the memory cell.
| Electrical parameter | Value |
| | 3.3 V | | 8 V | | 1 pF | | 3 fF | | 360 fF | , | 199 | MFG1,2 | 6 m/3 m | , , , | 6 m/3 m | | 30 m/1.5 m | , | 12 m/6 m | , | 30 m/6 m | | 12 m/6 | | 60 m/6 m | | 100 m/1.5 m | | 50 A | | 1.5 V | | 3.3 V | | 0–3.3 V |
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