Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 5
The PL intensity
temperature dependence in MBE grown Si/Si1-xGex 3D NS
samples with the indicated average Ge concentration x measured for different PL
bands. Figure 5(c) compares the PL intensity temperature dependencies measured
for PL bands with peaks at 0.75 eV (SiGe core) and 0.85 eV.
