Stress Induced Effects for Advanced Polarization Control in Silicon Photonics Components
Figure 3
Stress distributions in the
(a) -direction and (b) -direction. The ridge height is 2.2 m, the width is 1.8 m, and the etch depth is 1.47 m. The cladding oxide is 1 m thick with a compressive stress of = −320 MPa. (c) Stress-induced material
birefringence corresponding to the stress
distributions shown in Figures 3(a) and 3(b).
