GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

Figure 9

Results of DPP-assisted annealing of sample subjected to preliminary annealing after ion implantation. Processing was performed under the same conditions as in Figure 6 (applying current density of 9.9 A/cm² while irradiating the device with 532 nm laser light at power of 0.4 W). (a) Comparison of initial spectrum and spectrum obtained at saturation. (b) Rate of increase of EL spectral intensity (black solid curve). Case without preliminary annealing is also shown for comparison (Figure 6(c), red curve).

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