Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications

Table 1

Comparison of simulated and measured electrical parameters of the basic trench power MOSFET.

Device parameters	Basic trench MOSFET
	Modeled (type A)	Measured (IR6618)
BVDSS @250 $\mu$A (V)	36.4	33
VTH @250 $\mu$A (V)	1.35	1.7
$R_{\text{DS}(\text{on})}$ @4.5 V (mΩ)	2.3	3.2
$Q_G$ @4.5 V/15 V (nC)	43	45
$Q_{\text{GD}}$ @15 V (nC)	15	15
$Q_{\text{rr}}$ @100 A/$\mu$s (nC)	33.5	46