A complete design strategy (mechanical and electrical) for a 25 W 28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The converter includes a high-temperature SOI-based PWM controller featuring 150 kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high-side gate driver. Several passive technologies were investigated for both control and power sections. Capacitor technologies were characterized over temperature and over time at 300<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M1" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><path id="x2218" d="M326 255q0 -56 -41 -96t-99 -40t-99 40t-41 96t41 96t99 40t99 -40t41 -96zM274 255q0 38 -25.5 65t-62.5 27t-62.5 -27t-25.5 -65t25.5 -65t62.5 -27t62.5 27t25.5 65z"></path></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><path id="x43" d="M614 175l29 -10q-33 -109 -57 -154q-121 -26 -184 -26q-90 0 -160.5 29t-112.5 77t-63.5 105.5t-21.5 119.5q0 157 108 253t277 96q36 0 71.5 -5t69 -13.5t36.5 -8.5q15 -102 20 -150l-29 -8q-20 79 -66.5 114t-128.5 35q-119 0 -187.5 -86t-68.5 -207&#xA;q0 -140 73.5 -227.5t188.5 -87.5q73 0 119.5 37.5t86.5 116.5z"></path></g>

        
    
</svg>, power inductors designed and tested up to 350<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M2" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><use xlink:href="#x2218"></use></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><use xlink:href="#x43"></use></g>

        
    
</svg>, and power transformers designed and tested up to 500<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M3" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><use xlink:href="#x2218"></use></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><use xlink:href="#x43"></use></g>

        
    
</svg>. Northrop Grumman normally-off SiC JFETs were used as power switches and were characterized up to 250<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M4" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><use xlink:href="#x2218"></use></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><use xlink:href="#x43"></use></g>

        
    
</svg>. Efficiency and mass optimization routines were developed with the data gained from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results of the first prototype module are presented, with operation from 25<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M5" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><use xlink:href="#x2218"></use></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><use xlink:href="#x43"></use></g>

        
    
</svg> up to an ambient temperature of 240<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-3.13504pt;width:19.299999px;" id="M6" height="17.012501" version="1.1" viewBox="0 0 19.299999 17.012501" width="19.299999">
    
        
            <g transform="matrix(.012,-0,0,-.012,2.9,4.712)"><use xlink:href="#x2218"></use></g>

            <g transform="matrix(.017,-0,0,-.017,7.937,12.875)"><use xlink:href="#x43"></use></g>

        
    
</svg> .

Bradley A. Reese

Brice McPherson

Robert Shaw

Jared Hornberger

Roberto M. Schupbach

Alexander B. Lostetter

High-Temperature SOI/SiC-Based DC-DC Converter Suite

A novel concept of on-chip bondwire inductors and transformers with ferrite epoxy glob coating is proposed to offer a cost effective approach realizing power systems on chip (SOC). We have investigated the concept both experimentally and with finite element modeling. A <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-1.90608pt;width:13.175px;" id="M1" height="14.3125" version="1.1" viewBox="0 0 13.175 14.3125" width="13.175">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,11.4)"><path id="x1D444" d="M745 361q0 -134 -83.5 -233t-214.5 -130l16 -11q97 -67 250 -132l-8 -23q-76 3 -131 16q-81 19 -242 125l-20 13q-129 8 -209 91t-80 208q0 160 116 271t289 111q136 0 226.5 -83t90.5 -223zM645 356q0 127 -57.5 201.5t-169.5 74.5q-126 0 -210.5 -104.5t-84.5 -248.5&#xA;q0 -97 46 -166.5t129 -87.5l84 15l29 -19q104 21 169 121.5t65 213.5z"></path></g>

        
    
</svg> factor of 30–40 is experimentally demonstrated for the bondwire inductors which represents an improvement by a factor of 3–30 over the state-of-the-art MEMS micromachined inductors. Transformer parameters including self- and mutual inductance and coupling factors are extracted from both modeled and measured <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.1254pt;width:8.2875004px;" id="M2" height="11.75" version="1.1" viewBox="0 0 8.2875004 11.75" width="8.2875004">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,11.4)"><path id="x1D446" d="M457 488l-30 -3q-17 148 -131 148q-53 0 -84.5 -34.5t-31.5 -82.5q0 -42 25.5 -72t74.5 -62l33 -22q63 -42 95 -85t32 -102q0 -84 -67 -137t-163 -53q-58 0 -113 22t-70 43l-4 152l27 4q4 -32 15 -62.5t31 -59.5t53.5 -47t76.5 -18q56 0 92 35t36 96q0 39 -25 70t-78 68&#xA;l-31 22q-32 23 -53.5 41.5t-45 57t-23.5 77.5q0 82 58 132.5t156 50.5q46 0 101 -17l18.5 -6t17 -6t8.5 -3q-4 -55 0 -147z"></path></g>

        
    
</svg>-parameters. More importantly, the bondwire magnetic components can be easily integrated into SOC manufacturing processes with minimal changes and open enormous possibilities for realizing cost-effective, high-current, high-efficiency power SOCs. 

Jian Lu

Hongwei Jia

Andres Arias

Xun Gong

Z. John Shen

On-Chip Bondwire Magnetics with Ferrite-Epoxy Glob Coating for Power Systems on Chip

This paper presents an approach for assessment of power quality parameters using analysis of fundamental and harmonic voltage and current waveforms. Park transformation technique has been utilized for the analysis in three-phase system, which has reduced the computational effort to a great extent. Contributions of fundamental and harmonic components in power system voltage and current signals have been assessed separately. An algorithm has been developed to calculate the power quality parameters from online signals. This algorithm has been simulated for a radial system, and the results have been compared with that obtained from a standard FFT-based system. The results are seen to be in good agreement with that of the standard system.

Surajit Chattopadhyay

Samarjit Sengupta

Madhuchhanda Mitra

Area-Based Approach in Power Quality Assessment

A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising 
                  technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 
                  4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.17555pt;width:46.325001px;" id="M1" height="18.612499" version="1.1" viewBox="0 0 46.325001 18.612499" width="46.325001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><path id="x41" d="M673 0h-245v28q47 6 58 16t1 39l-55 154h-213q-31 -87 -36 -129q-16 -47 -5 -61t68 -19v-28h-226v28q50 7 68.5 23.5t43.5 80.5l214 524l24 9l193 -536q23 -63 41.5 -79.5t68.5 -21.5v-28zM418 280l-81 255h-2q-74 -197 -101 -255h184z"></path></g><g transform="matrix(.017,-0,0,-.017,11.809,15.775)"><path id="x2F" d="M368 703l-264 -866h-60l265 866h59z"></path></g><g transform="matrix(.017,-0,0,-.017,18.812,15.775)"><path id="x63" d="M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12&#xA;t60.5 43z"></path></g><g transform="matrix(.017,-0,0,-.017,26.003,15.775)"><path id="x6D" d="M797 0h-214v26q46 5 58 17.5t12 63.5v167q0 116 -88 116q-48 0 -112 -52q3 -18 3 -42v-195q0 -46 11 -58t53 -17v-26h-214v26q48 5 59.5 17t11.5 60v172q0 115 -88 115q-47 0 -109 -52v-235q0 -47 10 -59.5t48 -17.5v-26h-211v26q50 5 62.5 17t12.5 60v207q0 48 -9 59.5&#xA;t-52 18.5v23q79 14 139 41v-81q3 2 29 20.5t44 29.5q45 28 81 28t66 -22t46 -61q25 20 83 57q39 26 76 26q59 0 93 -40t34 -113v-193q0 -49 10.5 -60.5t54.5 -16.5v-26z"></path></g>

            <g transform="matrix(.012,-0,0,-.012,39.925,7.613)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z"></path></g>

        
    
</svg> current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 
9.56-A load current, the SiC ETO shows a fast turn-off time of 
1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.17555pt;width:51.075001px;" id="M2" height="18.612499" version="1.1" viewBox="0 0 51.075001 18.612499" width="51.075001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><path id="x57" d="M956 650v-28q-52 -7 -69 -22.5t-39 -77.5q-60 -175 -165 -533h-31l-175 499h-2l-163 -499h-31l-164 535q-18 60 -36 76.5t-65 21.5v28h243v-28q-53 -7 -63 -18.5t3 -49.5l122 -412h2l162 499h29l175 -500h2q87 277 113 401q12 45 0.5 59t-68.5 21v28h220z"></path></g><g transform="matrix(.017,-0,0,-.017,16.568,15.775)"><use xlink:href="#x2F"></use></g><g transform="matrix(.017,-0,0,-.017,23.572,15.775)"><use xlink:href="#x63"></use></g><g transform="matrix(.017,-0,0,-.017,30.762,15.775)"><use xlink:href="#x6D"></use></g>

            <g transform="matrix(.012,-0,0,-.012,44.688,7.613)"><use xlink:href="#x32"></use></g>

        
    
</svg> conduction and the 100 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.17555pt;width:51.075001px;" id="M3" height="18.612499" version="1.1" viewBox="0 0 51.075001 18.612499" width="51.075001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><use xlink:href="#x57"></use></g><g transform="matrix(.017,-0,0,-.017,16.568,15.775)"><use xlink:href="#x2F"></use></g><g transform="matrix(.017,-0,0,-.017,23.572,15.775)"><use xlink:href="#x63"></use></g><g transform="matrix(.017,-0,0,-.017,30.762,15.775)"><use xlink:href="#x6D"></use></g>

            <g transform="matrix(.012,-0,0,-.012,44.688,7.613)"><use xlink:href="#x32"></use></g>

        
    
</svg> turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 
4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage 
(&gt;5 kV) and higher frequency (10 kHz) are needed.

Jun Wang

Gangyao Wang

Jun Li

Alex Q. Huang

Jerry Melcher

Stan Atcitty

Silicon Carbide Emitter Turn-Off Thyristor

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use <i>pn</i> junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.17555pt;width:40.950001px;" id="M1" height="13.1875" version="1.1" viewBox="0 0 40.950001 13.1875" width="40.950001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,12.875)"><path id="x33" d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5&#xA;q0 45 -26.5 69.5t-68.5 24.5q-67 0 -120 -79l-20 20l43 63q51 56 127 56h1q66 0 107 -37t41 -95q0 -42 -31 -71q-22 -23 -68 -54z"></path></g><g transform="matrix(.017,-0,0,-.017,8.222,12.875)"><path id="x30" d="M241 635q53 0 94 -28.5t63.5 -76t33.5 -102.5t11 -116q0 -58 -11 -112.5t-34 -103.5t-63.5 -78.5t-94.5 -29.5t-95 28t-64.5 75t-34.5 102.5t-11 118.5q0 58 11.5 112.5t34.5 103t64.5 78t95.5 29.5zM238 602q-32 0 -55.5 -25t-35.5 -68t-17.5 -91t-5.5 -105&#xA;q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z"></path></g><g transform="matrix(.017,-0,0,-.017,16.381,12.875)"><use xlink:href="#x30"></use></g>

            <g transform="matrix(.012,-0,0,-.012,24.538,4.712)"><path id="x2218" d="M326 255q0 -56 -41 -96t-99 -40t-99 40t-41 96t41 96t99 40t99 -40t41 -96zM274 255q0 38 -25.5 65t-62.5 27t-62.5 -27t-25.5 -65t25.5 -65t62.5 -27t62.5 27t25.5 65z"></path></g>

            <g transform="matrix(.017,-0,0,-.017,29.575,12.875)"><path id="x43" d="M614 175l29 -10q-33 -109 -57 -154q-121 -26 -184 -26q-90 0 -160.5 29t-112.5 77t-63.5 105.5t-21.5 119.5q0 157 108 253t277 96q36 0 71.5 -5t69 -13.5t36.5 -8.5q15 -102 20 -150l-29 -8q-20 79 -66.5 114t-128.5 35q-119 0 -187.5 -86t-68.5 -207&#xA;q0 -140 73.5 -227.5t188.5 -87.5q73 0 119.5 37.5t86.5 116.5z"></path></g>

        
    
</svg>. 0.19 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.12538pt;width:27.575001px;" id="M2" height="16.049999" version="1.1" viewBox="0 0 27.575001 16.049999" width="27.575001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><path id="x63" d="M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12&#xA;t60.5 43z"></path></g><g transform="matrix(.017,-0,0,-.017,7.253,15.775)"><path id="x6D" d="M797 0h-214v26q46 5 58 17.5t12 63.5v167q0 116 -88 116q-48 0 -112 -52q3 -18 3 -42v-195q0 -46 11 -58t53 -17v-26h-214v26q48 5 59.5 17t11.5 60v172q0 115 -88 115q-47 0 -109 -52v-235q0 -47 10 -59.5t48 -17.5v-26h-211v26q50 5 62.5 17t12.5 60v207q0 48 -9 59.5&#xA;t-52 18.5v23q79 14 139 41v-81q3 2 29 20.5t44 29.5q45 28 81 28t66 -22t46 -61q25 20 83 57q39 26 76 26q59 0 93 -40t34 -113v-193q0 -49 10.5 -60.5t54.5 -16.5v-26z"></path></g>

            <g transform="matrix(.012,-0,0,-.012,21.175,7.613)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z"></path></g>

        
    
</svg> 1200 V normally-on and 0.15 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.12538pt;width:27.575001px;" id="M3" height="16.049999" version="1.1" viewBox="0 0 27.575001 16.049999" width="27.575001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><use xlink:href="#x63"></use></g><g transform="matrix(.017,-0,0,-.017,7.253,15.775)"><use xlink:href="#x6D"></use></g>

            <g transform="matrix(.012,-0,0,-.012,21.175,7.613)"><use xlink:href="#x32"></use></g>

        
    
</svg> low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2 V and a specific onstate resistance of 5.4 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.0pt;width:26.9125px;" id="M4" height="11.425" version="1.1" viewBox="0 0 26.9125 11.425" width="26.9125">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,11.363)"><use xlink:href="#x6D"></use></g><g transform="matrix(.017,-0,0,-.017,13.984,11.363)"><path id="x3A9" d="M719 146l-18 -146h-243l-5 18q2 4 17 25t24 36l25 42t26.5 52.5t21 56.5t16 65t5.5 68q0 121 -55.5 194.5t-149.5 73.5q-95 0 -150 -72t-55 -199q0 -54 18.5 -114t36.5 -94t48.5 -82.5t32.5 -51.5l-7 -18h-244l-17 146l27 1q17 -49 31.5 -62t45.5 -13h89l-21 21t-26 26.5&#xA;l-26 29t-28 35.5l-23 37.5t-20.5 43t-12 45.5t-5.5 51q0 133 88 218.5t219 85.5q132 0 218 -83t86 -218q0 -40 -11.5 -78t-33 -71.5t-39 -56t-44 -51t-32.5 -35.5h84q35 0 48 12t31 63z"></path></g>

        
    
</svg> <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.12538pt;width:27.575001px;" id="M5" height="16.049999" version="1.1" viewBox="0 0 27.575001 16.049999" width="27.575001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><use xlink:href="#x63"></use></g><g transform="matrix(.017,-0,0,-.017,7.253,15.775)"><use xlink:href="#x6D"></use></g>

            <g transform="matrix(.012,-0,0,-.012,21.175,7.613)"><use xlink:href="#x32"></use></g>

        
    
</svg>. The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15 <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.0pt;width:26.9125px;" id="M6" height="11.425" version="1.1" viewBox="0 0 26.9125 11.425" width="26.9125">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,11.363)"><use xlink:href="#x6D"></use></g><g transform="matrix(.017,-0,0,-.017,13.984,11.363)"><use xlink:href="#x3A9"></use></g>

        
    
</svg> <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.12538pt;width:27.575001px;" id="M7" height="16.049999" version="1.1" viewBox="0 0 27.575001 16.049999" width="27.575001">
    
        
            <g transform="matrix(.017,-0,0,-.017,.062,15.775)"><use xlink:href="#x63"></use></g><g transform="matrix(.017,-0,0,-.017,7.253,15.775)"><use xlink:href="#x6D"></use></g>

            <g transform="matrix(.012,-0,0,-.012,21.175,7.613)"><use xlink:href="#x32"></use></g>

        
    
</svg>. The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches.  At a forward drain voltage drop of 2.2 V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.

Victor Veliadis

Ty McNutt

Megan Snook

Harold Hearne

Paul Potyraj

Jeremy Junghans

Charles Scozzie

Large Area Silicon Carbide Vertical JFETs for 1200&#x2009;V Cascode Switch Operation

This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range.  Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5 MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1 MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The <svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-4.68874pt;width:91.762497px;" id="M1" height="17.5625" version="1.1" viewBox="0 0 91.762497 17.5625" width="91.762497">
    
        
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</svg> figure of merit (FOM) still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2 MHz and 65% at 5 MHz even with the most advanced trench MOSFET technologies.

Yali Xiong

Xu Cheng

Xiangcheng Wang

Pavan Kumar

Lina Guo

Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications

The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.

Sibylle Dieckerhoff

Thies Wernicke

Christine Kallmayer

Stephan Guttowski

Herbert Reichl

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

This paper proposes a zero-voltage-transition (ZVT) pulse-width-modulated (PWM) synchronous buck converter, which is designed to operate at low voltage and high efficiency typically required for portable systems. A new passive auxiliary circuit that allows the main switch to operate with zero-voltage switching has been incorporated in the conventional PWM synchronous buck converter. The operation principles and a detailed steady-state analysis of the ZVT-PWM synchronous converter implemented with the auxiliary circuit are presented. Besides, the main switch and all of the semiconductor devices operate under soft-switching conditions. Thus, the auxiliary circuit provides a larger overall efficiency. The feasibility of the auxiliary circuit is confirmed by simulation and experimental results.

Anup Kumar Panda

Swapnajit Pattnaik

K. K. Mohapatra

A Novel Soft-Switching Synchronous Buck Converter for Portable Applications

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Advances in Power Electronics