Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications

Table 2

Comparison of trench power MOSFET technologies.

Type	Area factor	Ron (m$\mathrm{\Omega }$)	Ciss (pF)	Coss (pF)	Crss (pF)	$Q_{\text{rr}}$ (nC)	$Q_G$ (nC)	$Q_{\text{GD}}$ (nC)	${\text{Ron}}^{*}{Q}_G$ (m${\mathrm{\Omega }}^{*}\text{nC}$)	${\text{Ron}}^{*}{Q}_{\text{GD}}$ (m${\mathrm{\Omega }}^{*}\text{nC}$)
Base structure (A)	1	9.4	1263	234	144	31.992	13.587	5.0	127.718	47
Thick bottom (B)	1.04	9.4	1230.8	212.2	109.2	28.14	10.505	4.2	98.747	39.48
Floating poly plug (C)	1.138	9.4	1410.3	227.3	118.9	36.296	11.7	4.5	109.98	42.3
Narrow trench (D)	1.106	9.4	1303	233	106.9	33.097	12.2	5.1	114.68	47.94
High density (E)	0.622	9.4	1546	126	105	18.096	13.685	4.8	128.639	45.12
Low density (F)	1.94	9.4	1318	428	240	57.257	19.24	11.3	180.856	106.22