Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation
Figure 12
Onstate drain current characteristics versus drain voltage characteristics of a high-voltage 0.143 cm2 active area packaged VJFET, at a gate-to-source bias range of 0 to 3 V in steps of 0.5 V. At a gate-to-source bias of 2.5 V (with a gate current of 12 mA), the VJFET outputs 53 A and 100 A at forward drain voltage drops of 2 V and 4.8 V, respectively.
