Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation
Figure 13
Onstate drain current characteristics of a switch consisting of a single 0.143 cm2 active area 1200-V SiC VJFET connected in the cascode configuration with two paralleled 75-V/97-A commercial silicon MOSFETs. At a MOSFET gate-to-source bias of 15 V, the cascode switch outputs 33 A at a forward drain voltage drop of 2.2 V.
