Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation
Figure 14
Blocking voltage versus gate bias characteristics of a 0.13 cm2 active area low-voltage normally-off SiC VJFET. At a gate-to-source bias of 0 V and a drain current density of 1 mA/cm2, the VJFET blocks 44 V (normally off to 44 V).
