Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

Figure 16

Onstate drain current characteristics versus drain voltage characteristics of an all-SiC cascode switch consisting of a low-voltage 0.13 cm² active area VJFET and a 1200-V 0.143 cm² active area VJFET. The measurements were taken at cascode gate biases of 0 to 3.5 V, in steps of 0.5 V. At a cascode gate bias of 2.5 V, the switch outputs 24 A with a forward drain voltage drop of 4.7 V.