Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

<table>Forward voltage drops versus current densities of Northrop Grumman’s all-SiC VJFET-based cascode switch and of commercial Si MOSFET, Si IGBT, and Si CoolMOS switches. The SiC switch has a lower measured voltage drop at a given current density, even at the elevated temperature of 150<sup>°</sup>C.</table>

Advances in Power Electronics

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Figure 2

Figure 2: Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation 