International Journal of Power Management Electronics
Volume 2008 (2008), Article ID 891027, 5 pages
doi:10.1155/2008/891027
Research Article

Silicon Carbide Emitter Turn-Off Thyristor

1Semiconductor Power Electronics Center (SPEC), Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
2Solitronics LLC, Cary, NC 27518, USA
3Sandia National Laboratories, Albuquerque, NM 87185, USA

Received 5 February 2008; Accepted 27 April 2008

Academic Editor: Ty McNutt

Copyright © 2008 Jun Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S.-H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, “10 kV, 5A 4H-SiC power DMOSFET,” in Proceedings of the 18th IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD '06), pp. 1–4, Naples, Italy, June 2006.
  2. A. Agarwal, S. H. Ryu, J. Palmour, et al., “Power MOSFETs in 4H-SiC: device design and technology,” in Silicon Carbide: Recent Major Advances, W. J. Choyke, H. Matsunami, and G. Pensl, Eds., pp. 785–812, Springer, Berlin, Germany, 2004.
  3. J. A. Cooper, Jr. and A. Agarwal, “SiC power-switching devices-the second electronics revolution?,” Proceedings of the IEEE, vol. 90, no. 6, pp. 956–968, 2002. View at Publisher · View at Google Scholar
  4. S. Van Camper, A. Ezis, J. Zingaro, et al., “7 kV 4H-SiC GTO thyristor,” in Materials Research Society Symposium Proceedings, vol. 742, San Francisco, Calif, USA, April 2002, paper K7.7.1.
  5. M. Das, Q. Zhang, R. Callanan, et al., “A 13 kV 4H-SiC N-channel IGBT with low Rdiff,on and fast switching,” in Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM '07), Kyoto, Japan, October 2007.
  6. R. Singh and A. R. Hefner, “Reliability of SiC MOS devices,” Solid-State Electronics, vol. 48, no. 10-11, pp. 1717–1720. View at Publisher · View at Google Scholar
  7. S. Krishnaswami, M. Das, B. Hull, et al., “Gate oxide reliability of 4H-SiC MOS devices,” in Proceedings of the 43rd Annual IEEE International Reliability Physics Symposium, pp. 592–593, San Jose, Calif, USA, April 2005.
  8. Y. Li, A. Q. Huang, and F. C. Lee, “Introducing the emitter turn-off thyristor (ETO),” in Proceedings of the 33rd Annual Meeting on Industry Applications (IAS '98), vol. 2, pp. 860–846, St. Louis, Mo, USA, October 1998. View at Publisher · View at Google Scholar
  9. Y. Li, A. Q. Huang, and K. Motto, “Experimental and numerical study of the emitter turn-off thyristor (ETO),” IEEE Transactions on Power Electronics, vol. 15, no. 3, pp. 561–574, 2000. View at Publisher · View at Google Scholar
  10. B. Chen, A. Q. Huang, and S. Atcitty, “Control power self-generation and sensors integration in emitter turn-off (ETO) thyristor,” in Proceedings of the 41th Annual Meeting on Industry Applications (IAS '06), vol. 1, pp. 351–358, Tampa, Fla, USA, October 2006. View at Publisher · View at Google Scholar
  11. B. Zhang, Y. Liu, X. Zhou, J. Hawley, and A. Q. Huang, “The high power and high frequency operation of the emitter turn-off (ETO) thyristor,” in Proceedings of the 29th Annual Conference of the IEEE Industrial Electronics Society (IECON '03), vol. 2, pp. 1167–1172, Roanoke, Va, USA, November 2003. View at Publisher · View at Google Scholar
  12. S.-H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, “3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC,” IEEE Electron Device Letters, vol. 22, no. 3, pp. 127–129, 2001. View at Publisher · View at Google Scholar