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ElectroComponent Science and Technology
Volume 7 (1980), Issue 1-3, Pages 93-96
http://dx.doi.org/10.1155/APEC.7.93

A ZnTe Thin Film Memory Device

Laboratorium voor Elektronika en Meettechniek, Sint-Pietersnieuwstraat 41, Gent B-9000, Belgium

Received 13 February 1980

Copyright © 1980 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.