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ElectroComponent Science and Technology
Volume 6 (1980), Issue 3-4, Pages 131-134
http://dx.doi.org/10.1155/APEC.6.131

State of the Art in Thin Film Transistor: A Review of the Used Insulator–Semiconductor Combinations

Laboratorium voor elektronika en meettechniek, Rijksuniversiteit te Gent, Sint Pietersnieuwstraat 41, Gent B–9000, Belgium

Received 4 April 1979

Copyright © 1980 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper deals with the technology of the thin film transistor (TFT). It deals with the different semiconductors used successfully in a TFT, as well as the different gate insulators employed. A variety of structures have been realized in the past. The most important difficulty with the use of these TFT structures consisted of low frequency instabilities, caused by mobile ions in the insulator and slow states at the semiconductor-insulator interface. Various proposed solutions to these problems will be discussed.