<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>TiN</mml:mtext><mml:mi>x</mml:mi></mml:msub></mml:math> Thin-Film Resistors for Hybrid Integrated Circuits

doi:10.1155/APEC.6.231

Journal Menu

About this Journal
Abstracting and Indexing
Aims and Scope
Article Processing Charges
Articles in Press
Author Guidelines
Bibliographic Information
Citations to this Journal
Contact Information
Editorial Board
Editorial Workflow
Free eTOC Alerts
Publication Ethics
Reviewers Acknowledgment
Submit a Manuscript
Subscription Information
Table of Contents

Open Special Issues
Published Special Issues
Special Issue Guidelines

Abstract
Full-Text PDF
How to Cite this Article
Complete Special Issue

ElectroComponent Science and Technology
Volume 6 (1980), Issue 3-4, Pages 231-233
doi:10.1155/APEC.6.231

TiNx Thin-Film Resistors for Hybrid Integrated Circuits

Z. Kempisty, L. Kròl-Stępniewska, and W. Posadowski

Institute of Electron Technology of Technical University, Wrocław 50-370, Poland

Received 7 July 1979

Copyright © 1980 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

TiNx thin-films have been evaluated for use as thin-film resistors. Thin-films were obtained by reactive triode sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistive TiNx layers, the value of x was 0.96.² The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were measured during accelerated ageing.