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Active and Passive Electronic Components
Volume 2011 (2011), Article ID 713129, 4 pages
http://dx.doi.org/10.1155/2011/713129
Research Article

Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET

Laboratoire d'Électronique, d'Instrumentation et de Traitement du Signal, Equipe de Caractérisation des Composants à Semi-Conducteurs, Faculté des Sciences, Université Chouaib Doukkali, BP 20, EL Jadida, Morocco

Received 28 June 2011; Revised 10 August 2011; Accepted 10 August 2011

Academic Editor: G. Ghibaudo

Copyright © 2011 Noureddine Maouhoub and Khalid Rais. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic 𝐼 𝑑 ( 𝑉 𝑔 ). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.