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Active and Passive Electronic Components
Volume 2011 (2011), Article ID 713129, 4 pages
http://dx.doi.org/10.1155/2011/713129
Research Article

Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET

Laboratoire d'Électronique, d'Instrumentation et de Traitement du Signal, Equipe de Caractérisation des Composants à Semi-Conducteurs, Faculté des Sciences, Université Chouaib Doukkali, BP 20, EL Jadida, Morocco

Received 28 June 2011; Revised 10 August 2011; Accepted 10 August 2011

Academic Editor: G. Ghibaudo

Copyright © 2011 Noureddine Maouhoub and Khalid Rais. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Noureddine Maouhoub and Khalid Rais, “Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET,” Active and Passive Electronic Components, vol. 2011, Article ID 713129, 4 pages, 2011. doi:10.1155/2011/713129