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Active and Passive Electronic Components
Volume 2012 (2012), Article ID 493239, 4 pages
A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current
1Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433, USA
2Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA
3Defense and Power Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USA
Received 21 March 2012; Revised 10 July 2012; Accepted 28 July 2012
Academic Editor: Jung-Hui Tsai
Copyright © 2012 Bradley D. Christiansen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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