Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

<table>Variation of quantum integrated charge at virtual source with gate voltage for different film widths where the height and length are <svg height="11.425" id="M121" style="vertical-align:-0.27588pt" version="1.1" viewbox="0 0 42.612499 11.425" width="42.612499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M865 650q-1 -4 -4 -14t-4 -14q-62 -5 -77 -19.5t-29 -82.5l-74 -394q-12 -61 -0.5 -77t75.5 -21l-6 -28h-273l8 28q64 5 82 21t29 76l36 198h-380l-37 -197q-11 -64 0.5 -78.5t79.5 -19.5l-6 -28h-268l6 28q60 6 75.5 21.5t26.5 76.5l75 394q13 66 2 81.5t-77 20.5l8 28
h263l-6 -28q-58 -5 -75.5 -21t-30.5 -81l-26 -153h377l29 153q12 67 2 81t-74 21l5 28h268z" id="x1D43B"></path></g><g transform="matrix(.017,-0,0,-.017,19.679,11.112)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,34.383,11.112)"><path d="M244 635q90 0 143 -72t53 -177q0 -133 -65 -229.5t-171 -139.5q-79 -32 -140 -32l-5 30q109 18 185 91t101 186l-68 -36q-29 -16 -60 -16q-79 0 -129 51.5t-50 130.5q0 80 57 146.5t149 66.5zM228 602q-52 0 -78 -45.5t-26 -98.5q0 -69 36.5 -115.5t97.5 -46.5
q53 0 90 28q4 31 4 66q0 51 -9.5 95.5t-39 80.5t-75.5 36z" id="x39"></path></g>
</svg> nm, <svg height="11.375" id="M122" style="vertical-align:-0.17555pt" version="1.1" viewbox="0 0 45.575001 11.375" width="45.575001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M559 163q-23 -66 -68 -163h-474l6 26q62 4 79.5 19.5t28.5 75.5l78 409q7 35 8.5 49t-8 25t-24 13t-51.5 5l5 28h266l-6 -28q-65 -5 -79.5 -18t-25.5 -74l-76 -406q-10 -57 14 -75q12 -13 96 -13q93 0 126 29q41 40 76 109z" id="x1D43F"></path></g><g transform="matrix(.017,-0,0,-.017,14.477,11.112)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,29.181,11.112)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g><g transform="matrix(.017,-0,0,-.017,37.341,11.112)"><path d="M241 635q53 0 94 -28.5t63.5 -76t33.5 -102.5t11 -116q0 -58 -11 -112.5t-34 -103.5t-63.5 -78.5t-94.5 -29.5t-95 28t-64.5 75t-34.5 102.5t-11 118.5q0 58 11.5 112.5t34.5 103t64.5 78t95.5 29.5zM238 602q-32 0 -55.5 -25t-35.5 -68t-17.5 -91t-5.5 -105
q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" id="x30"></path></g>
</svg> nm.</table>

Active and Passive Electronic Components

fig4

Figure 4

Figure 4: Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs 