Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Figure 4

Distribution histograms of the (a)–(d) crystal orientation fraction and the (e)–(h) grain size in the poly-Si layers with SiO₂, AZO, ITO, and TiN underlayers. These histograms were obtained from the orientation maps shown in Figure 3. The integrated values of the preferentially oriented area fraction from 0° to 20° are shown in (a)–(d); the average grain sizes are shown in (e)–(h).