Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

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<g transform="matrix(.012,-0,0,-.012,12.875,15.325)"><path d="M594 511q0 -122 -171 -157l1 -2q158 -33 158 -159q0 -52 -34.5 -95t-90.5 -65q-76 -33 -217 -33h-223l8 28q63 5 79.5 19t26.5 72l83 426q9 48 -2.5 60t-77.5 17l6 28h259q195 0 195 -139zM499 509q0 59 -37 83t-91 24q-36 0 -51 -9q-17 -9 -22 -44l-35 -195h62
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</svg>) from an InN ND/Si heterojunction diode.</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes 