Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

<table>The barrier height plotted against the ideality factor, the extrapolation to <svg height="11.125" id="M79" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 36.237499 11.125" width="36.237499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" id="x1D45B"></path></g><g transform="matrix(.017,-0,0,-.017,13.305,10.862)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,28.008,10.862)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g>
</svg> via a linear fit gave the average barrier height <svg height="19.924999" id="M80" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 74.349998 19.924999" width="74.349998" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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q0 51 19 93.5t49 70t69.5 47t77.5 28t76 10.5q0 30 -11 39t-54 12v28h218zM335 118v429q-34 -2 -67 -13.5t-63.5 -35t-49.5 -65.5t-19 -96q0 -56 18.5 -99t49 -67.5t63.5 -37.5t68 -15zM418 547v-429q35 2 67.5 14t63.5 35.5t50 66.5t19 99t-19 99t-50 66.5t-64 35t-67 13.5
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q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" id="x30"></path></g><g transform="matrix(.012,-0,0,-.012,12.875,19.863)"><path d="M594 511q0 -122 -171 -157l1 -2q158 -33 158 -159q0 -52 -34.5 -95t-90.5 -65q-76 -33 -217 -33h-223l8 28q63 5 79.5 19t26.5 72l83 426q9 48 -2.5 60t-77.5 17l6 28h259q195 0 195 -139zM499 509q0 59 -37 83t-91 24q-36 0 -51 -9q-17 -9 -22 -44l-35 -195h62
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<g transform="matrix(.017,-0,0,-.017,31.238,15.775)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,45.924,15.775)"><path d="M241 635q53 0 94 -28.5t63.5 -76t33.5 -102.5t11 -116q0 -58 -11 -112.5t-34 -103.5t-63.5 -78.5t-94.5 -29.5t-95 28t-64.5 75t-34.5 102.5t-11 118.5q0 58 11.5 112.5t34.5 103t64.5 78t95.5 29.5zM238 602q-32 0 -55.5 -25t-35.5 -68t-17.5 -91t-5.5 -105
q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" id="x30"></path></g><g transform="matrix(.017,-0,0,-.017,54.084,15.775)"><path d="M113 -12q-24 0 -39.5 16t-15.5 42q0 24 16 40.5t40 16.5t40 -16.5t16 -40.5q0 -26 -16 -42t-41 -16z" id="x2E"></path></g><g transform="matrix(.017,-0,0,-.017,57.96,15.775)"><path d="M447 623l8 -12l-283 -613l-74 -10l-7 11q174 283 297 551h-216q-48 0 -62.5 -12t-33.5 -63h-29q10 60 18 148h382z" id="x37"></path></g><g transform="matrix(.017,-0,0,-.017,66.119,15.775)"><path d="M153 550l-26 -186q79 31 111 31q90 0 141.5 -51t51.5 -119q0 -93 -89 -166q-85 -69 -173 -71q-32 0 -61.5 11.5t-41.5 23.5q-18 17 -17 34q2 16 22 33q14 9 26 -1q61 -50 124 -50q60 0 93 43.5t33 104.5q0 69 -41.5 110t-121.5 41q-53 0 -102 -20l38 305h286l6 -8
l-26 -65h-233z" id="x35"></path></g>
</svg> eV.</table>

Journal of Nanomaterials

fig6

Figure 6

Figure 6: Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes 