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Journal of Nanomaterials
Volume 2013 (2013), Article ID 215613, 6 pages
Review Article

Materials for Future Quantum Dot-Based Memories

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2Electric and Computer Engineering Department, King Abdul-Aziz University, Jeddah 21589, Saudi Arabia

Received 30 April 2013; Accepted 5 June 2013

Academic Editor: Yang Chai

Copyright © 2013 T. Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [6 citations]

The following is the list of published articles that have cited the current article.

  • T. Nowozin, A. Wiengarten, L. Bonato, D. Bimberg, Wei-Hsun Lin, Shih-Yen Lin, M. N. Ajour, K. Daqrouq, and A. S. Balamesh, “Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots,” Journal of Nanotechnology, vol. 2013, pp. 1–5, 2013. View at Publisher · View at Google Scholar
  • Tobias Nowozin, Michael Narodovitch, Leo Bonato, Dieter Bimberg, Mohammed N. Ajour, Khaled Daqrouq, and Abdullah Balamash, “Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure,” Journal of Nanotechnology, vol. 2013, pp. 1–4, 2013. View at Publisher · View at Google Scholar
  • G. Stracke, E. M. Sala, S. Selve, T. Niermann, A. Schliwa, A. Strittmatter, and D. Bimberg, “Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots,” Applied Physics Letters, vol. 104, no. 12, pp. 123107, 2014. View at Publisher · View at Google Scholar
  • Sk Masiul Islam, Pranab Biswas, P. Banerji, and S. Chakraborty, “InAs quantum dots as charge storing elements for applications in flash memory devices,” Materials Science and Engineering: B, 2015. View at Publisher · View at Google Scholar
  • Leo Bonato, Elisa M. Sala, Gernot Stracke, Tobias Nowozin, André Strittmatter, Mohammed Nasser Ajour, Khaled Daqrouq, and Dieter Bimberg, “230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier,” Applied Physics Letters, vol. 106, no. 4, pp. 042102, 2015. View at Publisher · View at Google Scholar
  • P. Maier, F. Hartmann, M. Emmerling, C. Schneider, M. Kamp, S. Höfling, and L. Worschech, “Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing,” Physical Review Applied, vol. 5, no. 5, 2016. View at Publisher · View at Google Scholar