Towards Ordered Silicon Nanostructures through Self-Assembling Mechanisms and Processes

Figure 19

Schematic diagrams of the process: (a) SiO₂ on Si patterned through BCP lithography and successive dry etching. (b) Si etch using SiO₂ as a hard mask. (c) Oxide removal. Tilted SEM images of (d) etched silicon pores after oxide removal and (e) tantalum nitride layer deposited on the oxidized pores, reproduced with permission from [84].