Towards Ordered Silicon Nanostructures through Self-Assembling Mechanisms and Processes

<div><svg height="8.64656pt" id="M69" style="vertical-align:-0.04981995pt" version="1.1" viewbox="-0.0498162 -8.59674 5.76278 8.64656" width="5.76278pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g></svg>-<svg height="8.80314pt" id="M70" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -8.59674 9.46864 8.80314" width="9.46864pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g></svg> characteristics obtained between −3 V and +1 V for the flat (line) and the NH based (line+symbols) Si solar cells.</div>

Journal of Nanomaterials

fig23

Figure 23

Figure 23: Towards Ordered Silicon Nanostructures through Self-Assembling Mechanisms and Processes 