Towards Ordered Silicon Nanostructures through Self-Assembling Mechanisms and Processes

Figure 3

(a) Nearest neighbor edge distance distribution measured on Si-NCs samples deposited by CVD at 550°C for 80 s (black line), 90 s (red line), and 100 s (green line), through analysis of EFTEM images. (b) Simulation of the deposition process by using the Monte Carlo method relative to the deposition condition of 550°C for 100 s.

(a)

(b)