Editorial Board

• Francisco J. Arregui, Public University of Navarre, Spain
• Francesco Baldini, Istituto di Fisica Applicata “Nello Carrara”, Italy
• Benachir Bouchikhi, Université Moulay Ismaïl, Morocco
• Hubert Braendle, The ABB Group, Switzerland
• Stefania Campopiano, University of Naples Parthenope, Italy
• Mehmet Can Vuran, University of Nebraska-Lincoln, USA
• Christophe Caucheteur, Université de Mons, Belgium
• Shoushun Chen, Nanyang Technological University, Singapore
• Marco Consales, Università degli Studi del Sannio, Italy
• Jesus Corres, Universidad Publica de Navarra, Spain
• Geoffrey A. Cranch, Naval Research Laboratory, USA
• Andrea Cusano, University of Sannio, Italy
• Dzung V. Dao, Ritsumeikan University, Japan
• Cristina E. Davis, University of California, Davis, USA
• Utkan Demirci, Harvard Medical School, USA
• Xinyong Dong, China Jiliang University, China
• Denis Donlagic, University of Maribor, Slovenia
• Csaba Dücső, MTA Research Institute for Technical Physics and Materials Science, Hungary
• Isabelle Dufour, Université Bordeaux, France
• Luca Francioso, National Research Council, Italy
• Laurent Francis, Université catholique de Louvain, Belgium
• Wei Gao, Tohoku University, Japan
• Marco Grassi, University of Pavia, Italy
• Tuan Guo, Jinan University, China
• Jiri Homola, Institute of Photonics and Electronics, Czech Republic
• Bernhard Jakoby, Johannes Kepler University Linz, Austria
• Wieslaw Jakubik, Silesian University of Technology, Poland
• Kourosh Kalantar-Zadeh, RMIT University, Australia
• Challa S S R Kumar, Louisiana State University, USA
• Hiroki Kuwano, Tohoku University, Japan
• Yongxiang Li, Shanghai Institute of Ceramics, Chinese Academy of Sciences, China
• Yanbiao Liao, Tsinghua University, China
• Kazusuke Maenaka, University of Hyogo, Japan
• Eugenio Martinelli, Dept. Electronic Engineering, University of Rome Tor Vergata, Italy
• Yasuko Y. Maruo, NTT Group, Japan
• Ignacio R. Matias, Public University of Navarra, Spain
• Mike McShane, Texas A&M University, USA
• Igor L. Medintz, U.S. Naval Research Laboratory, USA
• J. R. Morante, Universitat de Barcelona, Spain
• Lucia Mosiello, Italian National Agency for New Technologies, Italy
• Masayuki Nakamura, NTT Group, Japan
• K. S. Narayan, Jawaharlal Nehru Centre for Advanced Scientific Research, India
• Masahiro Ohka, Nagoya University, Japan
• Matteo Pardo, National Research Council (CNR), Italy
• Michele Penza, ENEA, C.R. Brindisi, Italy
• Ioannis Raptis, National Center of Scientific Research “Demokritos”, Greece
• Christos Riziotis, National Hellenic Research Foundation, Greece
• Giorgio Sberveglieri, University of Brescia, Italy
• Mikhail G. Shlyagin, Centro de Investigación Científica y de Educación Superior de Ensenada, Mexico
• Pietro Siciliano, Institute for Microelectronics and Microsystems, Italian National Research Council, Italy
• Mana Sriyudthsak, Chulalongkorn University, Thailand
• David Stoppa, Fondazione Bruno Kessler, Italy
• Weilian Su, Naval Postgraduate School, USA
• Hidekuni Takao, Kagawa University, Japan
• Isao Takayanagi, Aptina Japan, LLC. Design Center, Japan
• Maria Tenje, Lund University, Sweden
• Athanasios V. Vasilakos, National Technical University of Athens, Greece
• Alexander Vergara, University of California, San Diego, USA
• Stanley E. Woodard, NASA, USA
• Hai Xiao, Missouri University of Science and Technology, USA
• Guangzhong Xie, University of Electronic Science and Technology of China, China