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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 413-417
http://dx.doi.org/10.1155/2001/12624

Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages

1Department of Electrical and Computer Engineering, North Carolina State University, Raleigh NC 27695, USA
2Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken NJ 07030, USA
3Army Research Office, RTP, NC 27709, USA
4Naval Research Lab, Washington D.C. 20375-5000, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Based on time-dependent numerical simulation of an double barrier quantum well structure, a time-dependent energy coupling model is presented to account for the operational principle of a new kind of resonant tunneling THz oscillators.