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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 425-429
http://dx.doi.org/10.1155/2001/16196

Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs

1Lehrstuhl für Technische Elektronik, Technische Universität München, München 80290, Germany
2Dipartimento di Ingegneria dell'Informazione, Università degli studi di Pisa, Via Diotisalvi 2, Pisa 1-56126, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have performed a three-dimensional statistical simulation of the threshold voltage distribution of deep submicron nMOSFETs, as a function of gate length, doping density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare our results with statistical simulations presented in the literature, and show that essentially only the vertical distribution of dopants has an effect on the standard deviation of the threshold voltage.