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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 435-439
http://dx.doi.org/10.1155/2001/19759

Scaling of pHEMTs to Decanano Dimensions

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland

Copyright © 2001 Hindawi Publishing Corporation.

Abstract

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.