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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 459-463
http://dx.doi.org/10.1155/2001/28105

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

IMEC-Interuniversity Microelectronics Centre, Kapeldreef 75, Heverlee B-3001, Belgium

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular technology. By taking into account a number of physics-based models and experimental results available in literature, the predicting capability of the process simulation has been conveniently improved. In particular, this paper shows how concentration-depth profiles from two different CMOS technologies have been successfully reproduced with a unique set of fitting parameters.