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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 79-84

A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices

1Advanced Materials Research Institute, University of New Orleans, New Orleans 70148, LA, USA
2Department of Electrical and Computer Engineering, Box 5720, Clarkson University, Potsdam 13676, NY, USA
3Department of Electrical and Computer Engineering, University of Central Florida, Orlando 32816, FL, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A finite element method based on the least-squares scheme is developed for hydrodynamic simulation of two-dimensional short-channel semiconductor devices. Although this general-purpose finite element method has been shown in fluid dynamics to be more universal to flow problems than other finite element approaches and has been applied in recent years to a wide range of problems in fluid dynamics, it is still unfamiliar to the semiconductor device community. Application of the developed hydrodynamic least squares finite element method (LSFEM) to simulation of a 2D MESFET with a deep-submicron gate has demonstrated its robustness and effectiveness for the hydrodynamic device simulation.