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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 91-95
http://dx.doi.org/10.1155/2001/39729

Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures

INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, Roma 00133, Italy

Copyright © 2001 Hindawi Publishing Corporation.

Abstract

We have developed a full-band pseudopotential-based approach to describe semiconductor nanostructures. The method relies on the bulk Bloch functions expansion of the system wavefunction, which guarantee an efficient integration of the full-band approach in self-consistent schemes where Schroedinger and Poisson equations are solved iteratively. In order to gain efficiency of the method a suitable separation between structure dependent and material dependent contributions to the system hamiltonian is presented. Results are shown for a typical Si/SiO2 MOS structure.