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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 91-95
http://dx.doi.org/10.1155/2001/39729

Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures

INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, Roma 00133, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have developed a full-band pseudopotential-based approach to describe semiconductor nanostructures. The method relies on the bulk Bloch functions expansion of the system wavefunction, which guarantee an efficient integration of the full-band approach in self-consistent schemes where Schroedinger and Poisson equations are solved iteratively. In order to gain efficiency of the method a suitable separation between structure dependent and material dependent contributions to the system hamiltonian is presented. Results are shown for a typical Si/SiO2 MOS structure.