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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 103-109
http://dx.doi.org/10.1155/2001/43502

3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices

Intel Technology CAD Division, 2200 Mission College Blvd., Santa Clara, CA, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Fluctuation effects are becoming important in advanced VLSI devices because of their increasing impact on circuit performance and chip yields. Accurate modelling of these effects generally requires full 3D simulation, which is used here to analyse four of the primary such effects. Polysilicon line edge roughness causes excess device leakage, which can be reduced at the cost of decreased performance. Phase-shift mask defects can reduce current drive and increase capacitance. Random dopant fluctuation, which causes variation in threshold voltage, is evaluated for three technology generations and it is shown that proper tip scaling can reduce these variations. Finally, a study of alpha particle strikes evaluates the effectiveness of SOI in improving soft error reliability.