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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 387-391
http://dx.doi.org/10.1155/2001/47013

Microscopic Modeling of GaN-based Heterostructures

INFM-Dipartimento di Ingegneria Elettronica, Università di Romà “Tor Vergata”, Roma 00133, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Self-consistent quantum modeling of GaN-based nanostructure are presented. The tight-binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.