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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 117-124
http://dx.doi.org/10.1155/2001/48073

Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials

1School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA
2Dept. of Information Technology, Mid-Sweden University, Sundsvall, Sweden
3Dept. of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present a discussion of the complexities encountered in particle simulation models for noncubic symmetry semiconductors, focusing on the wurtzite and 4H polytypes of GaN and SiC. We have identified three general issues, band structure, scattering mechanisms, and band intersections, which in our opinion, constitute the most important modifications to conventional Monte Carlo simulators for cubic symmetry semiconductors. It is found that the band intersection points present the greatest modeling challenge. We discuss the effect of band intersections on the transport dynamics and our initial attempts at treating transport near these points. Comparison to experimental data is also made.