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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 131-134
http://dx.doi.org/10.1155/2001/51736

An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices

1Department of Electrical and Computer Engineering, University of Massachusetts, Amherst 01003, MA, USA
2lBM SRDC East Fishkill Facility, Hopewell Junction, 12533, NY, USA
3Stanford University, Stanford 94305, CA, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A new analytical expression of thermal diffusion coefficient DT is derived. To the firstorder approximation, it is given by (1+η)-1(D/Tn) rather than (1–η)(D/Tn) where η=–(Tn/η*)(η*/Tn ) and η* represents the temperature-dependent bulk mobility. This new transport coefficient is implemented in our 2-D hydrodynamic device simulator and it seems to produce more reasonable results.