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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 273-279
http://dx.doi.org/10.1155/2001/52981

Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle

1Dipartimento di Matematica e Informatica, Universitá di Catania, Viale Andrea Doria, Catania 6-95125, Italy
2Dipartimento Interuniversitario di Matematica, Politecnico di Bari Via E. Orabona, Bari 4-70125, Italy

Copyright © 2001 Hindawi Publishing Corporation.

Abstract

A hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameters, has been formulated in [1,2] on the basis of the maximum entropy principle, by considering the energy band described by the Kane dispersion relation and by including electron-non polar optical phonon and electron-acoustic phonon scattering.

In [3] the validity of this model has been checked in the bulk case. Here the consistence is investigated by comparing with Monte Carlo data the results of the simulation of a submicron n+nn+ silicon diode for different length of the channel, bias voltage and doping profile.

The results show that the model is sufficiently accurate for CAD purposes.