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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 273-279
http://dx.doi.org/10.1155/2001/52981

Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle

1Dipartimento di Matematica e Informatica, Universitá di Catania, Viale Andrea Doria, Catania 6-95125, Italy
2Dipartimento Interuniversitario di Matematica, Politecnico di Bari Via E. Orabona, Bari 4-70125, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameters, has been formulated in [1,2] on the basis of the maximum entropy principle, by considering the energy band described by the Kane dispersion relation and by including electron-non polar optical phonon and electron-acoustic phonon scattering.

In [3] the validity of this model has been checked in the bulk case. Here the consistence is investigated by comparing with Monte Carlo data the results of the simulation of a submicron n+nn+ silicon diode for different length of the channel, bias voltage and doping profile.

The results show that the model is sufficiently accurate for CAD purposes.