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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 287-293
http://dx.doi.org/10.1155/2001/57564

Hot Electron Modelling of HEMTs

1Department of Applied Mathematics, University of Leeds, Leeds LS2 9JT, UK
2School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The hot-electron two-dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells. A method is described for pinning the conduction band at the contact edge to produce an extremely stable numerical solution. Results are presented for an eight layer GaAs-ALGaAs-InGaAs device.