- About this Journal
- Abstracting and Indexing
- Aims and Scope
- Article Processing Charges
- Articles in Press
- Author Guidelines
- Bibliographic Information
- Citations to this Journal
- Contact Information
- Editorial Board
- Editorial Workflow
- Free eTOC Alerts
- Publication Ethics
- Reviewers Acknowledgment
- Submit a Manuscript
- Subscription Information
- Table of Contents
VLSI Design
Volume 13 (2001), Issue 1-4, Pages 37-43
doi:10.1155/2001/65961
Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser
1Semiconductor Physics Institute, A. Goštauto 11, Vilnius 2600, Lithuania
2Dipartimento di Ingegneria dell'Innovazione, Istituto Nazionale di Fisica della Materia, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy
3Centre d'Electronique et de Micro-optoélectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, Montpellier 34095, France
4SiCLAB, Department of Electrical and Computer Engineering, Rutgers University, Piscataway 08855, NJ, USA
Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
We report Monte Carlo calculations of the amplification spectrum of microwave generation in bulk GaN and its dependence on applied electric fields, doping level, lattice temperature, etc. The amplification is shown to occur in a wide frequency range of 0.05 to 3 THz with an optimal generation efficiency of about 1 ∼ 2%.