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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 189-192
http://dx.doi.org/10.1155/2001/71879

Analytic I–V Model for Single-Electron Transistors

Center for Nano Science and Technology, Department of Electrical Engineering, University of Notre Dame, Notre Dame 46556, IN, India

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present an analytical model for the I–V characteristics of a single-electron transistor, which may be incorporated in a conventional circuit simulator, such as SPICE. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yields I–V curves which are in excellent agreement with the ones obtained from full-scale Monte Carlo simulations.