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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 85-90
http://dx.doi.org/10.1155/2001/82542

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

1Semiconductor Physics Institute, Vilnius, Lithuania
2Universidad de Salamanca, Salamanca, Spain
3Università di Lecce, Lecce, Italy
4Université Montpellier II, Montpellier Cedex 5 34095, France
5Semiconductor Physics Institute, Goshtauto 11, Vilnius 2600, Lithuania

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present a generalized transfer field method with the microscopic noise sources directly connected with the velocity and energy change during single scattering events. The advantages of this method are illustrated by hydrodynamic calculations of current and voltage noise spectra in several two-terminal submicron structures.